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  1. ; (, IEEE Microwave and Wireless Technology Letters)
    This letter presents a 27.5–46.2-GHz broadband low-noise amplifier (LNA) featuring IP3 enhancement. The LNA bandwidth (BW) is extended by implementing dual-resonant input matching and a broadband output network. The LNA IP3 is enhanced by incorporating parallel PMOS and NMOS paths in the second stage, with their output currents combined through a three-winding transformer. Implemented using the GlobalFoundries 45-nm CMOS silicon-on insulator (SOI) process, the LNA demonstrates 27.5–46.2 GHz effective BW, 2.1 dB minimum noise figure (NF), and 19.8 dB peak gain. The measured IIP3 is − 3.6 dBm at 34 GHz under 25.5 mW DC power consumption. Compared to recently reported broadband LNAs with a similar frequency range, this design achieves the state-of-the-art NF, IIP3, and figure-of-merit (FoM). 
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